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| Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.90.1 1.05 2.50.1 (1.45) 0.05 0.8 q q q q 0.45-0.05 +0.1 (Ta=25C) 1 2 3 0.45-0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.50.5 2.50.5 +0.1 Ratings 50 40 15 100 50 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.50.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 50 40 15 400 0.05 200 80 2000 0.2 V MHz mV min typ max 100 1 Unit nA A V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 14.50.5 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Allowing supply with the radial taping. 0.65 max. 0.85 1.0 3.50.1 0.8 s Features 0.15 0.7 4.0 1 Transistor PC -- Ta 500 160 Ta=25C 140 400 100 25C Ta=75C 80 -25C 2SD1995 IC -- VCE 120 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100A 90A 80A 70A 60A 50A 40A 30A 20A 10A 300 Collector current IC (mA) 60 200 40 100 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 1 3 10 30 100 300 1000 25C -25C IC/IB=10 1000 hFE -- IC 250 Ta=75C VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 800 25C Transition frequency fT (MHz) -10 -30 -100 200 600 -25C 150 400 100 200 50 0 - 0.1 - 0.3 -1 -3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 8 100 IE=0 f=1MHz Ta=25C NV -- IC VCE=10V GV=80dB Function=FLAT Ta=25C Rg=100k 60 22k 40 5k 20 100 NV -- VCE Collector output capacitance Cob (pF) 7 6 5 4 3 2 1 0 1 3 10 Rg=100k Noise voltage NV (mV) Noise voltage NV (mV) 80 80 60 22k 40 5k 20 0 30 100 1 3 10 30 100 0 1 3 10 IC=1mA GV=80dB Function=FLAT Ta=25C 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector to emitter voltage VCE (V) 2 |
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